vemi255a-hs3 document number 84772 rev. 1.6, 04-sep-08 vishay semiconductors www.vishay.com 1 19499 top v ie w 1 2 3 6 5 4 19957 1 for technical support, please contact: emi-filter@vishay.com 2-channel emi-filter with esd-protection features ? ultra compact llp75-6a package ? 2-channel emi-filter and esd-protection ? low leakage current ? line resistance of 50 ? typical cut-off frequency f 3db = 100 mhz ? esd-protection acc. iec 61000-4-2 30 kv contact discharge 30 kv air discharge ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee2002/96/ec marking (example only) dot = pin 1 marking xx = date code yy = type code (see table below) ordering information package data absolute maximum ratings * please see document ?vishay green and halogen-free definitions (5-2008)? http://www.vishay.com/doc?99902 21001 xx yy device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity vemi255a-hs3 vemi255a-hs3-gs08 3000 15 000 vemi255a-hs3 VEMI255A-HS3-GS18 10 000 10 000 device name package name marking code weight molding compound flammability rating moisture sensitivity level soldering conditions vemi255a-hs3 llp75-6a t1 5 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals parameter test conditions symbol value unit peak pulse current all i/o pin to pin 9; acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 4a esd immunity contact discharge acc. iec61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec61000-4-2; 10 pulses 30 operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
www.vishay.com 2 document number 84772 rev. 1.6, 04-sep-08 vemi255a-hs3 vishay semiconductors for technical support, please c ontact: emi-filter@vishay.com application note: a) with the vemi255a-hs3 2 different signal or data lines can be filtered and clamped to ground. due to the different clamping levels in forward and reverse direction the clamping behavior is bi directional and as ymmetric (bias) . the 2 independent emi-filter are placed between pin 1 and pin 6, and pin 3 and pin 4 they all are connected to the common ground pin 2. pin 5 is internally not connected. each filter is symmetrical so that all ports (pin 1, 3, 4, and 6) can be used as input or output. the circuit diagram of one emi-filter-channel shows two identical z-diodes at the input to ground and the output to ground. these z-diodes are characterized by the breakthrough voltage level (v br ) and the diode capacitance (c d ). below the breakthrough voltage level the z-diodes can be considered as capacitors. together with these capacitors and the line resistance r s between input and output the device works as a low pass filter. low frequency signals (f < f 3db ) pass the filter while high frequency signals (f > f 3db ) will be shorted to ground through the diode capacitances c d . each filter is symmetrical so that both ports can be used as input or output. 19420 l1 i n l2 i n l1 out l2 out 1 9500 1 2 3 6 5 4 19421 r s o u t (pin 4, 6) in (pin 1, 3) g n d (pin 2) c d c d 210 8 5
vemi255a-hs3 document number 84772 rev. 1.6, 04-sep-08 vishay semiconductors www.vishay.com 3 for technical support, please contact: emi-filter@vishay.com electrical characteristics ratings at 25 c, ambient temperature unless otherwise specified vemi255a-hs3 typical characteristics t amb = 25 c, unless otherwise specified parameter test conditions/remarks symbol min. ty p. max. unit filter channels number of channels which can be protected n channel 2 channel reverse stand off voltage at i r = 1 a each input to pin 2 v rwm 5v reverse current at v r = 5 v each input to pin 2 i r 1a reverse break down voltage each input to pin 2 at i r = 1 ma v br 6v pos. clamping voltage at i pp = 1 a applied at the input, measured at the output; acc. iec 61000-4-5 v c-out 7.8 v at i pp = i ppm = 4 a applied at the input, measured at the output; acc. iec 61000-4-5 v c-out 8v neg. clamping voltage at i pp = - 1 a applied at the input, measured at the output; acc. iec 61000-4-5 v c-out - 1 v at i pp = i ppm = - 4 a applied at the input, measured at the output; acc. iec 61000-4-5 v c-out - 1.2 v input capacitance at v r = 0 v; f = 1 mhz c in 60 pf at v r = 2.5 v; f = 1 mhz c in 37 pf esd-clamping voltage at 30 kv esd-pulse acc. iec 61000-4-2 v cesd 7.5 v line resistance measured between input and output; i s = 10 ma r s 45 50 55 cut-off frequency v in = 0 v; measured in a 50 system f 3db 100 mhz figure 1. esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 figure 2. 8/20 s peak pulse current wave form acc. iec 61000-4-5 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8
www.vishay.com 4 document number 84772 rev. 1.6, 04-sep-08 vemi255a-hs3 vishay semiconductors for technical support, please c ontact: emi-filter@vishay.com figure 3. typical forward current i f vs. forward voltage v f figure 4. typical input voltage v in vs. input current i in figure 5. typical cl amping voltage vs. peak pulse current i pp 0.5 0.6 0.7 0. 8 0.9 1 0.001 v f ( v ) i f (ma) 210 8 4 0.01 0.1 1 10 100 filter o u tp u t not connected v i n ( v ) i i n ( a) 8 7 6 5 4 3 2 1 0 0.01 0.1 1 10 100 1000 10000 10571 v c at inp u t v c at o u tp u t meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form). s u rge p u lse applied at the filter inp u t. 0123456 12 10 8 6 4 2 0 v c ( v ) i pp (a) 19572 figure 6. typical capacitance c d vs. reverse voltage v r figure 7. typical small si gnal transmission (s21) at z 0 = 50 f = 1 mhz 01 23 45 70 60 50 40 30 20 10 0 v i n ( v ) c i n (pf) 19570 v i n put = 0 v v i n put = 5 v meas u red in a 50 system 1 10 100 1000 10000 0 - 5 - 10 - 15 - 20 - 25 - 30 - 35 - 40 fre qu ency (mhz) transmission (s21) (db) 19569
vemi255a-hs3 document number 84772 rev. 1.6, 04-sep-08 vishay semiconductors www.vishay.com 5 for technical support, please contact: emi-filter@vishay.com package dimensions in mm (inches): llp75-6a 1 8 05 8
www.vishay.com 6 document number 84772 rev. 1.6, 04-sep-08 vishay semiconductors for technical support, please c ontact: emi-filter@vishay.com vemi255a-hs3 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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